Sanvitto D, Pulizzi F, Shields A J, Christianen P C, Holmes S N, Simmons M Y, Ritchie D A, Maan J C, Pepper M
Toshiba Research Europe Limited, Cambridge Research Laboratory, 260 Cambridge Science Park, Milton Road, Cambridge, CB4 0WE, UK.
Science. 2001 Oct 26;294(5543):837-9. doi: 10.1126/science.1064847. Epub 2001 Sep 27.
We report transport of electron-hole complexes in semiconductor quantum wells under applied electric fields. Negatively charged excitons (X-), created by laser excitation of a high electron mobility transistor, are observed to drift upon applying a voltage between the source and drain. In contrast, neutral excitons do not drift under similar conditions. The X- mobility is found to be as high as 6.5 x 10(4) cm2 V-1 s-1. The results demonstrate that X- exists as a free particle in the best-quality samples and suggest that light emission from opto-electronic devices can be manipulated through exciton drift under applied electric fields.
我们报告了在施加电场的情况下半导体量子阱中电子 - 空穴复合物的输运情况。通过对高电子迁移率晶体管进行激光激发产生的带负电荷的激子（X-），在源极和漏极之间施加电压时会发生漂移。相比之下，中性激子在类似条件下不会漂移。发现X-的迁移率高达6.5×10⁴ cm² V⁻¹ s⁻¹。结果表明，在质量最佳的样品中，X-以自由粒子的形式存在，这表明可以通过施加电场下的激子漂移来操纵光电器件的发光。
