Babel Amit, Jenekhe Samson A
Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-1750, USA.
J Am Chem Soc. 2003 Nov 12;125(45):13656-7. doi: 10.1021/ja0371810.
Field-effect mobility of electrons as high as 0.1 cm2/(V s) is observed in n-channel thin film transistors fabricated from a solution spin-coated conjugated ladder polymer, poly(benzobisimidazobenzophenanthroline) (BBL), under ambient air conditions. This is the highest electron mobility observed to date in a conjugated polymer semiconductor. Comparative studies of n-channel thin film transistors made from a structurally similar nonladder conjugated polymer BBB gave an electron mobility of 10-6 cm2/(V s). These results demonstrate that electron transport can be as facile as hole transport in conjugated polymer semiconductors and that ladder architecture of a conjugated polymer can substantially enhance charge carrier mobility.
在环境空气条件下，由溶液旋涂共轭梯形聚合物聚（苯并双咪唑并苯并菲咯啉）（BBL）制成的n沟道薄膜晶体管中，观察到电子的场效应迁移率高达0.1 cm²/（V·s）。这是迄今为止在共轭聚合物半导体中观察到的最高电子迁移率。对由结构相似的非梯形共轭聚合物BBB制成的n沟道薄膜晶体管的比较研究表明，其电子迁移率为10⁻⁶ cm²/（V·s）。这些结果表明，在共轭聚合物半导体中，电子传输可以与空穴传输一样容易，并且共轭聚合物的梯形结构可以显著提高电荷载流子迁移率。
