Shashkin A A, Kravchenko S V, Klapwijk T M
Physics Department, Northeastern University, Boston, Massachusetts 02115, USA.
Phys Rev Lett. 2001 Dec 24;87(26):266402. doi: 10.1103/PhysRevLett.87.266402. Epub 2001 Dec 6.
The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation energy and vanishing nonlinearity of current-voltage characteristics as extrapolated from the insulating side. We find that, in zero magnetic field (but not in the presence of a parallel magnetic field), both methods give equivalent results, adding support to the existence of a true zero-field metal-insulator transition.
二维电子气中金属-绝缘体转变的临界电子密度可通过两种不同方法确定:(i)电阻温度导数的符号变化,以及(ii)从绝缘侧外推得到的电流-电压特性的激活能消失和非线性消失。我们发现,在零磁场中(但在存在平行磁场时并非如此),两种方法给出的结果等效,这为真正的零场金属-绝缘体转变的存在提供了支持。