Dubi Yonatan, Meir Yigal, Avishai Yshai
Department of Physics, Ben Gurion University, Beer Sheva 84105, Israel.
Nature. 2007 Oct 18;449(7164):876-80. doi: 10.1038/nature06180.
The interplay of superconductivity and disorder has intrigued scientists for several decades. Disorder is expected to enhance the electrical resistance of a system, whereas superconductivity is associated with a zero-resistance state. Although superconductivity has been predicted to persist even in the presence of disorder, experiments performed on thin films have demonstrated a transition from a superconducting to an insulating state with increasing disorder or magnetic field. The nature of this transition is still under debate, and the subject has become even more relevant with the realization that high-transition-temperature (high-T(c)) superconductors are intrinsically disordered. Here we present numerical simulations of the superconductor-insulator transition in two-dimensional disordered superconductors, starting from a microscopic description that includes thermal phase fluctuations. We demonstrate explicitly that disorder leads to the formation of islands where the superconducting order is high. For weak disorder, or high electron density, increasing the magnetic field results in the eventual vanishing of the amplitude of the superconducting order parameter, thereby forming an insulating state. On the other hand, at lower electron densities or higher disorder, increasing the magnetic field suppresses the correlations between the phases of the superconducting order parameter in different islands, giving rise to a different type of superconductor-insulator transition. One of the important predictions of this work is that in the regime of high disorder, there are still superconducting islands in the sample, even on the insulating side of the transition. This result, which is consistent with experiments, explains the recently observed huge magneto-resistance peak in disordered thin films and may be relevant to the observation of 'the pseudogap phenomenon' in underdoped high-T(c) superconductors.
几十年来,超导性与无序性之间的相互作用一直吸引着科学家们。无序性预计会增加系统的电阻,而超导性则与零电阻状态相关。尽管据预测,即使存在无序性,超导性仍会持续存在,但对薄膜进行的实验表明,随着无序性或磁场的增加,会出现从超导态到绝缘态的转变。这种转变的本质仍在争论中,而且随着人们认识到高转变温度(高Tc)超导体本质上是无序的,这个问题变得更加重要。在此,我们从包含热相位涨落的微观描述出发,给出了二维无序超导体中超导体 - 绝缘体转变的数值模拟。我们明确证明,无序性会导致形成超导序较高的岛。对于弱无序或高电子密度,增加磁场会导致超导序参量的振幅最终消失,从而形成绝缘态。另一方面,在较低电子密度或较高无序性下,增加磁场会抑制不同岛中超导序参量相位之间的相关性,从而引发一种不同类型的超导体 - 绝缘体转变。这项工作的一个重要预测是,在高无序状态下,即使在转变的绝缘侧,样品中仍存在超导岛。这一与实验结果相符的结果,解释了最近在无序薄膜中观察到的巨大磁阻峰,并且可能与欠掺杂高Tc超导体中“赝能隙现象”的观测有关。