硅反型层中移动电子的低密度自旋磁化率和有效质量。
Low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers.
作者信息
Pudalov V M, Gershenson M E, Kojima H, Butch N, Dizhur E M, Brunthaler G, Prinz A, Bauer G
机构信息
Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA.
出版信息
Phys Rev Lett. 2002 May 13;88(19):196404. doi: 10.1103/PhysRevLett.88.196404. Epub 2002 Apr 30.
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities n approximately (1-50)x10(11) cm(-2), which includes the vicinity of the apparent metal-insulator transition in two dimensions (2D MIT). Using a novel technique of measuring the SdH oscillations in superimposed and independently controlled parallel and perpendicular magnetic fields, we determined the spin susceptibility chi(), the effective mass m(), and the g() factor for mobile electrons. These quantities increase gradually with decreasing density; near the 2D MIT, we observed enhancement of chi() by a factor of approximately 4.7.
我们研究了高迁移率硅金属氧化物半导体（Si-MOS）样品在很宽的载流子密度范围n≈(1 - 50)×10¹¹ cm⁻²内的舒布尼科夫-德哈斯（SdH）振荡，该范围包括二维（2D）金属-绝缘体转变（MIT）的明显区域附近。通过一种在叠加且独立控制的平行和垂直磁场中测量SdH振荡的新技术，我们确定了移动电子的自旋磁化率χ*、有效质量m和g因子。这些量随着密度降低而逐渐增加；在2D MIT附近，我们观察到χ*增强了约4.7倍。
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