Elmourabit F, Dlimi S, El Moutaouakil A, Id Ouissaaden F, Khoukh A, Limouny L, Elkhatat H, El Kaaouachi A
Laboratory of Sciences and Technologies of Information and Communication (LSTIC), Microelectronics, Microwaves, Instrumentation and Information (MM2I), Department of Physics, Faculty of Sciences, Chouaib Doukkali University, Av. des Facultés, El Jadida 24000, Morocco.
Department of Electrical and Communication Engineering, United Arab Emirates University, Al Ain P.O. Box 15551, United Arab Emirates.
Nanomaterials (Basel). 2023 Jul 11;13(14):2047. doi: 10.3390/nano13142047.
Our investigation focuses on the analysis of the conductive properties of high-mobility 2D-Si-MOSFETs as they approach the critical carrier density, nsc (approximately 0.72×1011 cm-2), which marks the metal insulator transition (MIT). In close proximity to the nsc, the conductivity exhibits a linear dependence on the temperature (). By examining the extrapolated conductivity at the absolute zero temperature ( = 0), denoted as σ0, as a function of the electron density ns, we identify two distinct regimes with varying σ0(ns) patterns, indicating the existence of two different phases. The transition from one of these two regimes to another, coinciding with nsc, is abrupt and serves as the focus of our investigation. Our aim is to establish the possibility of a percolation type transition in the 2D-Si-MOSFETs' sample. In fact, we observed that the model of percolation is applicable only for densities very close to nsc*=n2 (where n2 is the linear extrapolation of σ0), indicating the percolation type transition essentially represents a phase transition at the zero temperature.
我们的研究重点是分析高迁移率二维硅金属氧化物半导体场效应晶体管（2D-Si-MOSFETs）在接近临界载流子密度nsc（约0.72×10¹¹ cm⁻²）时的导电特性，nsc标志着金属绝缘体转变（MIT）。在接近nsc时，电导率对温度呈线性依赖关系。通过研究绝对零度（T = 0）时的外推电导率σ0作为电子密度ns的函数，我们识别出两种具有不同σ0(ns)模式的不同状态，这表明存在两种不同的相。这两种状态之一到另一种状态的转变与nsc一致，是突然发生的，也是我们研究的重点。我们的目标是确定二维硅金属氧化物半导体场效应晶体管样品中存在渗流型转变的可能性。事实上，我们观察到渗流模型仅适用于非常接近nsc* = n2（其中n2是σ0的线性外推值）的密度，这表明渗流型转变本质上代表了零温度下的相变。
