Daulton T L, Bernatowicz T J, Lewis R S, Messenger S, Stadermann F J, Amari S
Materials Science Division, Argonne National Laboratory, Argonne IL, 60439-4838, USA.
Science. 2002 Jun 7;296(5574):1852-5. doi: 10.1126/science.1071136.
The inferred crystallographic class of circumstellar silicon carbide based on astronomical infrared spectra is controversial. We have directly determined the polytype distribution of circumstellar SiC from transmission electron microscopy of presolar silicon carbide from the Murchison carbonaceous meteorite. Only two polytypes (of a possible several hundred) were observed: cubic 3C and hexagonal 2H silicon carbide and their intergrowths. We conclude that this structural simplicity is a direct consequence of the low pressures in circumstellar outflows and the corresponding low silicon carbide condensation temperatures.
基于天文红外光谱推断的星际碳化硅晶体学类别存在争议。我们通过对默奇森碳质陨石中前太阳碳化硅进行透射电子显微镜分析,直接确定了星际碳化硅的多型体分布。仅观察到了两种多型体(可能有数百种):立方3C型和六方2H型碳化硅及其共生体。我们得出结论,这种结构的简单性是星际外流中低压以及相应的低碳化硅冷凝温度的直接结果。