Montcalm Claude, Grabner R Frederick, Hudyma Russell M, Schmidt Mark A, Spiller Eberhard, Walton Christopher C, Wedowski Marco, Folta James A
Information Science and Technology, Lawrence Livermore National Laboratory, Livermore, California 94551, USA.
Appl Opt. 2002 Jun 1;41(16):3262-9. doi: 10.1364/ao.41.003262.
We present our results of coating a first set of optical elements for an extreme-ultraviolet (EUV) lithography system. The optics were coated with Mo-Si multilayer mirrors by dc magnetron sputtering and characterized by synchrotron radiation. Near-normal incidence reflectances above 65% were achieved at 13.35 nm. The run-to-run reproducibility of the reflectance peak wavelength was maintained to within 0.4%, and the thickness uniformity (or gradient) was controlled to within +/-0.05% peak to valley, exceeding the prescribed specification. The deposition technique used for this study is an enabling technology for EUV lithography, making it possible to fabricate multilayer-coated optics to accuracies commensurate with atomic dimensions.
我们展示了为极紫外(EUV)光刻系统涂覆第一组光学元件的结果。通过直流磁控溅射法为这些光学元件涂覆了钼硅多层镜,并利用同步辐射进行了表征。在13.35纳米处实现了接近正入射反射率高于65%。反射峰值波长的批次间再现性保持在0.4%以内,厚度均匀性(或梯度)控制在峰谷之间的+/-0.05%以内,超过了规定的规格。本研究中使用的沉积技术是EUV光刻的一项赋能技术,使得制造精度与原子尺寸相当的多层涂覆光学元件成为可能。