Ahn Sung Ju, Sivaguru Mayandi, Chung Gap Chae, Rengel Zdenko, Matsumoto Hideaki
Research Institute for Bioresources, Okayama University, Chuo 2-20-1, Kurashiki 710-0046, Japan.
J Exp Bot. 2002 Sep;53(376):1959-66. doi: 10.1093/jxb/erf049.
It is generally understood that the inhibition of growth of root apices is the initial effect caused by aluminium (Al) toxicity. The correlation between impaired H+-fluxes across the plasma membrane (PM) and Al-induced growth inhibition, Al accumulation and callose formation in root apices of squash (Cucurbita pepo L. cv. Tetsukabuto) is reported here. The root inhibition was dependent on Al concentration, and the duration of exposure, with the damage occurring preferentially in regions with high Al accumulation and callose formation. Using the fluorescent Al indicator (Morin), Al was localized in the cell walls of the root-tip cells after 3 h and in the whole root-tip cells after 6 h of the Al treatment (50 micro M). The inhibition of H+-pumping rate in the highly purified PM vesicles obtained from the Al-treated apical root portions (1 cm) coincided with the inhibition of root growth under Al stress. Furthermore, H+-ATPase activity of PM vesicles prepared from the control root apices was strongly inhibited by Al in vitro in a dose-dependent manner. Approximately 50% inhibition was observed when PM vesicles were preincubated at Al concentration as low as 10 micro M followed by the enzyme assay in the medium without Al. Using the pH indicator (bromocresol purple), it is shown that surface pH of the control (0 Al) root apices was strongly alkalized from the starting pH of 4.5 in a time-dependent manner. By contrast, the surface pH changed only slightly in the Al-treated root apices. The changes in surface pH mediated by altered dynamics of H+ efflux and influx across the root tip PM play an important role in root growth as affected by Al.
一般认为,根尖生长受抑制是铝(Al)毒性导致的初始效应。本文报道了南瓜(西葫芦品种铁壁)根尖中质膜(PM)上H⁺通量受损与铝诱导的生长抑制、铝积累和胼胝质形成之间的相关性。根生长抑制取决于铝浓度和暴露时间,损伤优先发生在铝积累和胼胝质形成较高的区域。使用荧光铝指示剂(桑色素),在铝处理(50 μM)3小时后,铝定位于根尖细胞的细胞壁中,6小时后定位于整个根尖细胞中。从铝处理的根尖部分(1厘米)获得的高度纯化的质膜囊泡中H⁺泵浦速率的抑制与铝胁迫下根生长的抑制一致。此外,从对照根尖制备的质膜囊泡的H⁺-ATP酶活性在体外被铝以剂量依赖的方式强烈抑制。当质膜囊泡在低至10 μM的铝浓度下预孵育,然后在无铝的培养基中进行酶测定时,观察到约50%的抑制。使用pH指示剂(溴甲酚紫)表明,对照(0铝)根尖的表面pH从起始pH 4.5开始随时间强烈碱化。相比之下,铝处理的根尖表面pH变化很小。根尖质膜上H⁺流出和流入动态变化介导的表面pH变化在铝影响的根生长中起重要作用。