Hausmann Dennis, Becker Jill, Wang Shenglong, Gordon Roy G
Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, MA 02138, USA.
Science. 2002 Oct 11;298(5592):402-6. doi: 10.1126/science.1073552.
Highly uniform and conformal coatings can be made by the alternating exposures of a surface to vapors of two reactants, in a process commonly called atomic layer deposition (ALD). The application of ALD has, however, been limited because of slow deposition rates, with a theoretical maximum of one monolayer per cycle. We show that alternating exposure of a surface to vapors of trimethylaluminum and tris(tert-butoxy)silanol deposits highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates at rates of 12 nanometers (more than 32 monolayers) per cycle. This process allows for the uniform lining or filling of long, narrow holes. We propose that these ALD layers grow by a previously unknown catalytic mechanism that also operates during the rapid ALD of many other metal silicates. This process should allow improved production of many devices, such as trench insulation between transistors in microelectronics, planar waveguides, microelectromechanical structures, multilayer optical filters, and protective layers against diffusion, oxidation, or corrosion.
通过将表面交替暴露于两种反应物的蒸汽中,可以制备出高度均匀且保形的涂层,这一过程通常称为原子层沉积(ALD)。然而,由于沉积速率较慢,ALD的应用受到了限制,理论上每个循环最多只能沉积一个单层。我们发现,将表面交替暴露于三甲基铝和三(叔丁氧基)硅醇的蒸汽中,能够以每个循环12纳米(超过32个单层)的速率沉积高度保形的非晶二氧化硅和氧化铝纳米层。这一过程能够实现对长而窄的孔洞进行均匀衬里或填充。我们提出,这些ALD层是通过一种此前未知的催化机制生长的,这种机制在许多其他金属硅酸盐的快速ALD过程中也同样起作用。这一过程应该能够改进许多器件的生产,比如微电子中晶体管之间的沟槽绝缘、平面波导、微机电结构、多层光学滤波器以及防止扩散、氧化或腐蚀的保护层。