Albert F J, Emley N C, Myers E B, Ralph D C, Buhrman R A
Cornell University, Ithaca, New York 14853-2501, USA.
Phys Rev Lett. 2002 Nov 25;89(22):226802. doi: 10.1103/PhysRevLett.89.226802. Epub 2002 Nov 6.
We have studied magnetic switching by spin-polarized currents and also the magnetoresistance in sub-100-nm-diam thin-film Co/Cu/Co nanostructures, with the current flowing perpendicular to the plane of the films. By independently varying the thickness of all three layers and measuring the change of the switching currents, we test the theoretical models for spin-transfer switching. In addition, the changes in the switching current and magnetoresistance as a function of the Cu layer thickness give two independent measurements of the room-temperature spin-diffusion length in Cu.
我们研究了自旋极化电流引起的磁开关效应,以及直径小于100纳米的Co/Cu/Co薄膜纳米结构中的磁电阻,电流垂直于薄膜平面流动。通过独立改变所有三层的厚度并测量开关电流的变化,我们检验了自旋转移开关的理论模型。此外,开关电流和磁电阻随铜层厚度的变化给出了铜在室温下自旋扩散长度的两个独立测量值。