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基于 Si 衬底的三维 AlZnO/Al2O3/AlZnO 纳米电容器阵列用于能量存储。

Three-dimensional AlZnO/Al2O3/AlZnO nanocapacitor arrays on Si substrate for energy storage.

机构信息

State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.

出版信息

Nanoscale Res Lett. 2012 Oct 2;7(1):544. doi: 10.1186/1556-276X-7-544.

Abstract

High density three-dimensional AZO/Al2O3/AZO nanocapacitor arrays have been fabricated for energy storage applications. Using atomic layer deposition technique, the stack of AZO/Al2O3/AZO has been grown in the porous anodic alumina template which is directly formed on the Si substrate. The fabricated capacitor shows a high capacitance density of 15.3 fF/μm2 at 100 kHz, which is nearly 2.5 times over the planar capacitor under identical conditions in theory. Further, the charge-discharge characteristics of the capacitor are characterized, indicating that the resistance-capacitance time constants are equal to 300 ns for the charging and discharging processes, and have no dependence on the voltage supply. This reflects good power characteristics of the electrostatic capacitor.

摘要

用于储能应用的高密度三维 AZO/Al2O3/AZO 纳米电容器阵列已经制备。使用原子层沉积技术,在直接形成在 Si 衬底上的多孔阳极氧化铝模板中生长了 AZO/Al2O3/AZO 的堆叠。所制造的电容器在 100 kHz 时表现出 15.3 fF/μm2 的高电容密度,在相同条件下理论上比平面电容器高出近 2.5 倍。此外,还对电容器的充放电特性进行了表征,表明充电和放电过程的电阻-电容时间常数分别等于 300 ns,并且与电压供应无关。这反映了静电电容器的良好功率特性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d0b/3547769/564ea12e1b95/1556-276X-7-544-1.jpg

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