Lefloch F, Hoffmann C, Sanquer M, Quirion D
Département de Recherche Fondamentale sur la Matière Condensée/SPSMS, CEA Grenoble, 17 avenue des Martyrs, 38054 Grenoble Cedex 09, France.
Phys Rev Lett. 2003 Feb 14;90(6):067002. doi: 10.1103/PhysRevLett.90.067002. Epub 2003 Feb 10.
We performed low temperature shot noise measurements in superconductor (TiN) strongly disordered normal metal (heavily doped Si) weakly transparent junctions. We show that the conductance has a maximum due to coherent multiple Andreev reflections at low energy and that the shot noise is then twice the Poisson noise (S = 4eI). When the subgap conductance reaches its minimum at finite voltage the shot noise changes to the normal value (S = 2eI) due to a large quasiparticle contribution.
我们在超导体(TiN)-强无序正常金属(重掺杂Si)-弱透明结中进行了低温散粒噪声测量。我们表明,由于低能下的相干多次安德列夫反射,电导存在最大值,此时散粒噪声是泊松噪声的两倍(S = 4eI)。当子带隙电导在有限电压下达到最小值时,由于大量准粒子的贡献,散粒噪声变为正常值(S = 2eI)。