Sutter P, Zahl P, Sutter E, Bernard J E
Department of Physics, Colorado School of Mines, Golden, Colorado 80401, USA.
Phys Rev Lett. 2003 Apr 25;90(16):166101. doi: 10.1103/PhysRevLett.90.166101. Epub 2003 Apr 24.
The use of cleaved, [111]-oriented monocrystalline InAs probe tips enables state-specific imaging in constant-current filled-state scanning tunneling microscopy. On Si(111)-(7 x 7), the adatom or rest-atom dangling-bond states can thus be mapped selectively at different tip-sample bias. This state-selective imaging is made possible by energy gaps in the projected bulk band structure of the semiconductor probe. The lack of extended bulk states in these gaps gives rise to efficient energy filtering of the tunneling current, to which only sample states not aligned with a gap contribute significantly.
使用劈裂的、[111]取向的单晶InAs探针尖端能够在恒流填充态扫描隧道显微镜中实现特定状态成像。在Si(111)-(7×7)表面上，因此可以在不同的针尖-样品偏压下选择性地绘制吸附原子或剩余原子的悬空键态。这种状态选择性成像通过半导体探针投影体带结构中的能隙得以实现。这些能隙中缺少扩展的体态导致隧道电流的有效能量过滤，只有与能隙不对齐的样品态才对隧道电流有显著贡献。
