Lew W S, Li S P, Lopez-Diaz L, Hatton D C, Bland J A C
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom.
Phys Rev Lett. 2003 May 30;90(21):217201. doi: 10.1103/PhysRevLett.90.217201. Epub 2003 May 29.
We have found that during giant magnetoresistance measurements in approximately 10 x 10 mm(2) NiFe/Cu/Co continuous film spin-valve structures, the resistance value suddenly drops to its absolute minimum during the NiFe reversal. The results reveal that the alignment of all magnetic domains in the NiFe film follow exactly that of corresponding domains in the Co film for an appropriate applied field strength. This phenomenon is caused by trapping of the NiFe domain walls through the magnetostatic interaction with the Co domain-wall stray fields. Consequently, the interlayer domain-wall coupling induces a mirror domain structure in the magnetic trilayer.
我们发现在对约10×10毫米²的镍铁/铜/钴连续薄膜自旋阀结构进行巨磁电阻测量时,在镍铁反转过程中电阻值会突然降至其绝对最小值。结果表明,对于适当的外加磁场强度,镍铁薄膜中所有磁畴的排列与钴薄膜中相应磁畴的排列完全一致。这种现象是由于镍铁畴壁与钴畴壁杂散场的静磁相互作用而被捕获所致。因此,层间畴壁耦合在磁性三层膜中诱导出镜像畴结构。