Kisała Jakub, Kociubiński Andrzej, Jartych Elżbieta
Department of Electronics and Information Technology, Faculty of Electrical Engineering and Computer Science, Lublin University of Technology, 20-618 Lublin, Poland.
Materials (Basel). 2023 Jul 4;16(13):4810. doi: 10.3390/ma16134810.
The subject of this work is NiFe/Cu/NiFe thin-film structures made by magnetron sputtering and showing the phenomenon of magnetoresistance. Three series of samples differing in spatial dimensions and thickness of the Cu spacer were produced. During the sputtering process, an external magnetic field of approx. 10 mT was applied to the substrate. Measurements of the resistance of the structures were carried out in the field of neodymium magnets in three different positions of the sample in relation to the direction of the field. The measurements allowed us to indicate in which position the structures of different series achieved the greatest changes in resistance. For each of the three series of layer systems, the nature of changes in the determined coefficient of giant magnetoresistance Δ/ remained similar, while for the series with the smallest copper thickness (2.5 nm), the coefficient reached the highest value of about 2.7‱. In addition, impedance measurements were made for the structures of each series in the frequency range from 100 Hz to 100 kHz. For series with a thinner copper layer, a decrease in impedance values was observed in the 10-100 kHz range.
这项工作的主题是通过磁控溅射制备并呈现磁阻现象的NiFe/Cu/NiFe薄膜结构。制备了三组在空间尺寸和Cu间隔层厚度上有所不同的样品。在溅射过程中,向衬底施加了约10 mT的外部磁场。在钕磁铁的磁场中,针对样品相对于磁场方向的三个不同位置进行了结构电阻测量。这些测量使我们能够指出不同系列的结构在哪个位置实现了最大的电阻变化。对于这三组层系中的每一组,所确定的巨磁阻系数Δ/的变化性质保持相似,而对于铜厚度最小(2.5 nm)的系列,该系数达到了约2.7‱的最高值。此外,针对每个系列的结构在100 Hz至100 kHz的频率范围内进行了阻抗测量。对于铜层较薄的系列,在10 - 100 kHz范围内观察到阻抗值下降。