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低场下不连续 NiFe-Ag 多层薄膜中的巨磁电阻效应。

Giant Magnetoresistance at Low Fields in Discontinuous NiFe-Ag Multilayer Thin Films.

出版信息

Science. 1993 Aug 20;261(5124):1021-4. doi: 10.1126/science.261.5124.1021.

Abstract

A series of sputtered multilayers of Ni(80)Fe(20)-Ag was prepared to examine the giant magnetoresistance effect before and after annealing. For a wide range of NiFe and Ag thicknesses, no giant magnetoresistance was observed in the unannealed films. After annealing, a large, negative magnetoresistance was observed of order 4 to 6% in applied fields of order 5 to 10 oersteds at room temperature. The appearance of giant managetoresistance is concurrent with the breakup of the NiFe layers, which is attributable to a magnetostatic interaction that favors local antiparallel alignment of the moments in adjacent layers. These structures may be of significant practical importance as sensors that require large changes in resistance at low fields, such as magnetoresistive heads used in magnetic recording systems.

摘要

已经制备了一系列 Ni(80)Fe(20)-Ag 溅射多层膜,以在退火前后检查巨磁电阻效应。对于宽范围的 NiFe 和 Ag 厚度,未退火的薄膜中没有观察到巨磁电阻。退火后,在室温下,在 5 到 10 奥斯特的外加场中观察到了大的、负的磁电阻,约为 4 到 6%。巨磁电阻的出现与 NiFe 层的破裂同时发生,这归因于有利于相邻层中磁矩局部反平行排列的静磁相互作用。这些结构可能具有重要的实际意义,因为它们是在低场下需要电阻发生大变化的传感器,例如磁记录系统中使用的磁阻磁头。

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