Carneiro Carlos M M, Merzlyak Petr G, Yuldasheva Liliya N, Silva Leandro G, Thinnes Friedrich P, Krasilnikov Oleg V
Laboratory of Membrane Biophysics, Department of Biophysics and Radiobiology, Federal University of Pernambuco, 50670-901, Recife, PE, Brazil.
Biochim Biophys Acta. 2003 Jun 10;1612(2):144-53. doi: 10.1016/s0005-2736(03)00113-5.
To probe the volume changes of the voltage-dependent anion-selective channel (VDAC), the nonelectrolyte exclusion technique was taken because it is one of the few existing methods that may define quite accurately the rough geometry of lumen of ion channels (in membranes) for which there is no structural data.Here, we corroborate the data from our previous study [FEBS Lett. 416 (1997) 187] that the gross structural features of VDAC in its highest conductance state are asymmetric with respect to the plane of the membrane, and state that this asymmetry is not dependent on sign of voltage applied. Hence, the plasticity of VDAC does not play a role in the determination of lumen geometry at this state and the asymmetry is an internal property of the channel. We also show that the apparent diameter of the cis segment of the pore decreases slightly from 2 to 1.8 nm when the channel's conductance decreases from its high to low state. However, the trans funnel segment undergoes a more marked change in polymer accessible volume. Specifically, its larger diameter decreases from approximately 4 to 2.4 nm. Supposing the channel's total length is 4.6 nm, the apparent change in channel volume during this transition is estimated to be about 10 nm(3), i.e. about 40% of the channel's volume in the high conductance state.
为了探究电压依赖性阴离子选择性通道(VDAC)的体积变化,采用了非电解质排斥技术,因为它是少数几种能够相当准确地确定(尚无结构数据的)离子通道(膜中)内腔大致几何形状的现有方法之一。在此,我们证实了我们先前研究[《欧洲生物化学学会联合会快报》416 (1997) 187]中的数据,即处于最高电导状态的VDAC的总体结构特征相对于膜平面是不对称的,并指出这种不对称性不依赖于所施加电压的正负。因此,在这种状态下VDAC的可塑性在确定内腔几何形状方面不起作用,并且这种不对称性是通道的固有特性。我们还表明,当通道的电导从高状态降低到低状态时,孔的顺式段的表观直径从2纳米略微减小到1.8纳米。然而,反式漏斗段在聚合物可及体积方面经历了更显著的变化。具体而言,其较大直径从约4纳米减小到2.4纳米。假设通道的总长度为4.6纳米,在此转变过程中通道体积的表观变化估计约为10立方纳米,即约为通道在高电导状态下体积的40%。