Qin Weiping, Wu Changfeng, Qin Guanshi, Zhang Jisen, Zhao Dan
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022, China.
Phys Rev Lett. 2003 Jun 20;90(24):245503. doi: 10.1103/PhysRevLett.90.245503. Epub 2003 Jun 19.
An ordered Si-C alloy was observed in the products resulting from thermal reduction of molybdenum disilicide heating rods. High-resolution transmission electron microscopy measurements indicate that the Si1-xCx alloy with x approximately 25% is pure, single crystalline, and possesses a superlattice structure. The superlattice periodicity occurs along the diamond [001] direction and corresponds to the quintupling of the primary (002) periodicity. The possible growth mechanism is discussed. The Mo element is likely to play a crucial role in the growth process of the Si1-xCx alloy, since it can both reduce the energy required for breaking up C clusters and contribute to surface modification, which are of great benefit to enhance the carbon concentration and induce an ordered structure.
在二硅化钼加热棒热还原产物中观察到有序的硅碳合金。高分辨率透射电子显微镜测量表明，x约为25%的Si1-xCx合金是纯净的单晶，具有超晶格结构。超晶格周期沿金刚石[001]方向出现，对应于初级(002)周期的五倍。讨论了可能的生长机制。钼元素可能在Si1-xCx合金的生长过程中起关键作用，因为它既能降低分解碳团簇所需的能量，又有助于表面改性，这对提高碳浓度和诱导有序结构非常有利。
