KIER-UNIST Advanced Center for Energy, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon, 305-343, South Korea.
Nanoscale Res Lett. 2012 Sep 6;7(1):503. doi: 10.1186/1556-276X-7-503.
The emergence of third-generation photovoltaics based on Si relies on tunable bandgap materials with embedded nanocrystalline Si. One of the most promising approaches is based on the mixed-phase Si1 - xCx. We have investigated the light absorption controllability of nanocrystalline Si-embedded Si1 - xCx produced by thermal annealing of the Si-rich Si1 - xCx and composition-modulated superlattice structure. In addition, stoichiometric SiC was also investigated to comparatively analyze the characteristic differences. As a result, it was found that stoichiometric changes of the matrix material and incorporation of oxygen play key roles in light absorption controllability. Based on the results of this work and literature, a design strategy of nanocrystalline Si-embedded absorber materials for third-generation photovoltaics is discussed.
基于 Si 的第三代光伏的出现依赖于具有嵌入式纳米 Si 的可调带隙材料。最有前途的方法之一是基于混合相 Si1-xCx。我们研究了通过富 Si 的 Si1-xCx 和组成调制超晶格结构的热退火产生的嵌入纳米 Si 的 Si1-xCx 的光吸收可控性。此外，还研究了化学计量比 SiC，以比较分析其特征差异。结果发现，基体材料的化学计量比变化和氧的掺入在光吸收可控性中起着关键作用。基于这项工作和文献的结果，讨论了用于第三代光伏的嵌入式纳米 Si 吸收材料的设计策略。
