Ando Yoichi, Lavrov A N, Komiya Seiki
Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511, Japan.
Phys Rev Lett. 2003 Jun 20;90(24):247003. doi: 10.1103/PhysRevLett.90.247003. Epub 2003 Jun 19.
Detailed behavior of the magnetoresistance (MR) is studied in lightly doped antiferromagnetic La(1.99)Sr(0.01)CuO(4), where, thanks to the weak-ferromagnetic moment due to spin canting, the antiferromagnetic (AF) domain structure can be manipulated by the magnetic field. The MR behavior demonstrates that CuO(2) planes indeed contain antiphase AF-domain boundaries in which charges are confined, forming antiphase stripes. The data suggest that a high magnetic field turns the antiphase stripes into in-phase stripes, and the latter appear to give better conduction than the former, which challenges the notion that the antiphase character of stripes facilitates charge motion.
在轻掺杂反铁磁体La(1.99)Sr(0.01)CuO(4)中研究了磁电阻（MR）的详细行为。由于自旋倾斜导致的弱铁磁矩，反铁磁（AF）畴结构可以被磁场操控。MR行为表明，CuO(2)平面中确实包含反相AF畴边界，电荷被限制在其中，形成反相条纹。数据表明，高磁场会将反相条纹转变为同相条纹，且后者似乎比前者具有更好的导电性，这对条纹的反相特性有利于电荷运动这一观点提出了挑战。
