Unité Mixte de Physique CNRS/Thales, 1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France.
Helmholtz-Zentrum-Berlin für Materialen und Energie, Albert-Einstein-Strasse 15, 12489 Berlin, Germany.
Nat Commun. 2015 Feb 17;6:6306. doi: 10.1038/ncomms7306.
At interfaces between complex oxides, electronic, orbital and magnetic reconstructions may produce states of matter absent from the materials involved, offering novel possibilities for electronic and spintronic devices. Here we show that magnetic reconstruction has a strong influence on the interfacial spin selectivity, a key parameter controlling spin transport in magnetic tunnel junctions. In epitaxial heterostructures combining layers of antiferromagnetic LaFeO(3) (LFO) and ferromagnetic La(0.7)Sr(0.3)MnO(3) (LSMO), we find that a net magnetic moment is induced in the first few unit planes of LFO near the interface with LSMO. Using X-ray photoemission electron microscopy, we show that the ferromagnetic domain structure of the manganite electrodes is imprinted into the antiferromagnetic tunnel barrier, endowing it with spin selectivity. Finally, we find that the spin arrangement resulting from coexisting ferromagnetic and antiferromagnetic interactions strongly influences the tunnel magnetoresistance of LSMO/LFO/LSMO junctions through competing spin-polarization and spin-filtering effects.
在复杂氧化物的界面处,电子、轨道和磁结构的重建可能会产生与所涉及材料不同的物质状态,为电子和自旋电子器件提供了新的可能性。在这里,我们表明磁结构的重建对界面自旋选择性有很强的影响,这是控制磁性隧道结中自旋输运的关键参数。在由反铁磁 LaFeO3(LFO)和铁磁 La0.7Sr0.3MnO3(LSMO)层组成的外延异质结构中,我们发现 LFO 的前几个单位平面在与 LSMO 的界面处诱导出净磁矩。使用 X 射线光电子显微镜,我们表明锰氧化物电极的铁磁畴结构被印入反铁磁隧道势垒中,赋予其自旋选择性。最后,我们发现共存的铁磁和反铁磁相互作用产生的自旋排列通过竞争的自旋极化和自旋过滤效应强烈影响 LSMO/LFO/LSMO 结的隧道磁电阻。