Orosz Gábor Tamás, Sulyok Attila, Gergely György, Gurbán Sándor, Menyhard Miklós
Research Institute for Technical Physics and Material Sciences, Surface Physics Department, H-1121 Budapest, Konkoly-Thege út 29-33, Hungary.
Microsc Microanal. 2003 Aug;9(4):343-8. doi: 10.1017/S1431927603030241.
A new Monte Carlo method has been developed for simulating backscattered electron spectra, and this was applied for determining the surface excitation parameter (SEP). The simulation is based on direct tracking of electron trajectories in the solid, taking into account elastic and inelastic events. The elastic scattering cross sections are taken from literature, while inelastic cross section data are obtained by a fitting procedure. After some iterations, the program produces electron spectra fitting well to the experimental ones. Si and Ge electron spectra were simulated and SEP values were calculated. The SEP values are compared to other ones from literature.
已开发出一种新的蒙特卡罗方法来模拟背散射电子能谱，并将其用于确定表面激发参数（SEP）。该模拟基于对固体中电子轨迹的直接跟踪，同时考虑了弹性和非弹性事件。弹性散射截面取自文献，而非弹性截面数据则通过拟合程序获得。经过几次迭代后，该程序生成的电子能谱与实验能谱拟合良好。对硅和锗的电子能谱进行了模拟，并计算了SEP值。将这些SEP值与文献中的其他值进行了比较。
