Orosz Gábor Tamás, Gergely György, Gurbán Sándor, Menyhard Miklós, Jablonski Aleksander
Research Institute for Technical Physics and Materials Sciences, P.O. Box 49, H-1525 Budapest, Hungary.
Microsc Microanal. 2005 Dec;11(6):581-5. doi: 10.1017/S1431927605050713.
Surface-sensitive electron spectroscopies, like Auger electron spectroscopy, X-ray photoelectron spectroscopy and elastic peak electron spectroscopy (EPES) are suitable techniques to investigate surfaces and thin layers. A theoretical model for electron transport is needed to process the observed electron spectra. Electron transport descriptions are based on the differential elastic cross sections for the sample atoms and the inelastic mean free path (IMFP) of backscattered electrons. An electron impinging on the sample can lose energy either due to surface or volume excitations. In the present work a Monte Carlo (MC) simulation of the elastic peak of Si, Ag, Ni, Cu, and Au for surface analysis is presented. The IMFP of Si was determined applying the EPES method. The integrated elastic peak ratio of Si with the standard metal reference samples corrected for surface excitation provided IMFP values of Si in the energy range E = 0.2-2.0 keV. Experiments were made with the ESA 31 HSA (ATOMKI) and with the DESA-100 (Staib) spectrometers. Surface correction was based on the application of Chen's model and material parameters. The Monte Carlo simulations of elastically backscattered electron trajectories were made using new EPESWIN software of Jablonski. An improvement of IMFP experimental results was achieved applying the presented procedure.
表面敏感电子能谱技术，如俄歇电子能谱、X射线光电子能谱和弹性峰电子能谱（EPES），是研究表面和薄层的合适技术。处理观测到的电子能谱需要一个电子输运理论模型。电子输运描述基于样品原子的微分弹性截面和背散射电子的非弹性平均自由程（IMFP）。撞击样品的电子可能由于表面或体激发而损失能量。在本工作中，给出了用于表面分析的Si、Ag、Ni、Cu和Au弹性峰的蒙特卡罗（MC）模拟。应用EPES方法确定了Si的IMFP。用标准金属参考样品对Si的积分弹性峰比进行表面激发校正后，得到了能量范围E = 0.2 - 2.0 keV内Si的IMFP值。使用ESA 31 HSA（ATOMKI）和DESA - 100（Staib）光谱仪进行了实验。表面校正基于Chen模型和材料参数的应用。使用Jablonski的新EPESWIN软件对弹性背散射电子轨迹进行了蒙特卡罗模拟。应用所提出的程序，IMFP实验结果得到了改进。
