Dong Junhang, Hu Michael Z, Payzant E Andrew, Armstrong Timothy R, Becher Paul F
Chemical Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
J Nanosci Nanotechnol. 2002 Apr;2(2):161-9. doi: 10.1166/jnn.2002.082.
This article reports results of experimental studies on the microstructural evolution of nanocrystalline yttrium-stabilized zirconia thin films synthesized on a Si substrate via a polymeric precursor spin-coating approach. Grain growth behavior has been investigated at different annealing temperatures (700-1200 degrees C) for periods of up to 240 h. A similar film thickness (approximately 120 nm) was maintained for all of the samples used in this study, to avoid variation in film thickness-dependent grain growth. The effects of the thermal history of the film and the annealing atmosphere on the grain growth were also studied. A simple semiempirical grain growth model has been developed to describe isothermal annealing data and to predict dynamic grain growth behavior during the sintering of polymeric precursor layers to form cubic-phase nanocrystalline yttrium-stabilized zirconia films.
本文报道了通过聚合物前驱体旋涂法在硅衬底上合成的纳米晶钇稳定氧化锆薄膜微观结构演变的实验研究结果。研究了在不同退火温度（700 - 1200℃）下长达240小时的晶粒生长行为。本研究中使用的所有样品都保持了相似的膜厚（约120纳米），以避免膜厚依赖性晶粒生长的变化。还研究了薄膜的热历史和退火气氛对晶粒生长的影响。已开发出一个简单的半经验晶粒生长模型，用于描述等温退火数据并预测在聚合物前驱体层烧结形成立方相纳米晶钇稳定氧化锆薄膜过程中的动态晶粒生长行为。
