Liu X Q, Lu W, Shen S C, Tan H H, Jagadish C, Zou J
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People's Republic of China.
J Nanosci Nanotechnol. 2001 Dec;1(4):389-92. doi: 10.1166/jnn.2001.064.
A pseudomorphic Al0.5Ga0.5As/In0.25Ga0.75As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of crescent shaped QWRs at the bottom of the V-grooves was confirmed by both transmission electron microscopy and photoluminescence (PL) spectra. The temperature dependence of PL spectra demonstrated a fast decrease of the sidewall quantum well PL intensity with increasing temperature, which originates from relaxation of carriers from well to wire region. The self-aligned dual implantation technique was successfully used to selectively disable the adjacent quantum structures. Decrease of the PL intensity of QWR at 8 K was observed after selective implantation, which resulted from a decreased number of carriers relaxed from adjacent quantum structures.
通过低压金属有机气相外延在砷化镓V形槽衬底上生长了一种赝晶Al0.5Ga0.5As/In0.25Ga0.75As/砷化镓非对称量子线（QWR）结构。通过透射电子显微镜和光致发光（PL）光谱证实了在V形槽底部形成了月牙形量子线。PL光谱的温度依赖性表明，随着温度升高，侧壁量子阱PL强度迅速降低，这源于载流子从阱区弛豫到线区。自对准双注入技术成功用于选择性地使相邻量子结构失效。选择性注入后，观察到8K时QWR的PL强度降低，这是由于从相邻量子结构弛豫的载流子数量减少所致。
