温度对生长在应变砷化镓层上的砷化铟/砷化镓量子点生长的影响。

Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.

作者信息

Ahmad I, Avrutin V, Morkoç H, Moore J C, Baski A A

机构信息

Department of Electrical Engineering, Virginia Commonwealth University, Richmond, VA 23284-3068, USA.

出版信息

J Nanosci Nanotechnol. 2007 Aug;7(8):2889-93. doi: 10.1166/jnn.2007.607.

DOI:10.1166/jnn.2007.607

PMID:17685312

Abstract

We have studied the effect of temperature on the growth of InAs quantum dots (QDs) grown on a strained GaAs layer. The 2.0 nm thick, strained GaAs was obtained by growing it on a relaxed In0.15Ga0.85As layer. We observed that the density of QDs grown in this manner strongly depends on the growth temperature. A change in the growth temperature from 510 degrees C to 460 degrees C resulted in a large increase in the QD density from 2.3 x 10(10) cm(-2) to 6.7 x 10(10) cm(-2) and a sharp reduction in their height from 8.0 nm to 3.0 nm. Photoluminescence (PL) results from these QDs are also presented.

摘要

我们研究了温度对生长在应变GaAs层上的InAs量子点（QD）生长的影响。通过在弛豫的In0.15Ga0.85As层上生长获得了2.0nm厚的应变GaAs。我们观察到以这种方式生长的量子点密度强烈依赖于生长温度。生长温度从510℃变化到460℃导致量子点密度从2.3×10^10 cm^(-2)大幅增加到6.7×10^10 cm^(-2)，并且它们的高度从8.0nm急剧降低到3.0nm。还给出了这些量子点的光致发光（PL）结果。