Takahashi Masahide, Sakoh Akifumi, Ichii Kentaro, Tokuda Yomei, Yoko Toshinobu, Nishii Junji
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan.
Appl Opt. 2003 Aug 1;42(22):4594-8. doi: 10.1364/ao.42.004594.
Irradiation with intense ultraviolet laser pulses induced a large refractive-index change in 30GeO2-70SiO2 waveguide-grade thin films prepared by the plasma-enhanced chemical vapor deposition method, which contained a large amount of photoactive Ge2+ defects. The maximum index change in the as-deposited films by KrF and XeF excimer laser irradiation was estimated to be 1.2 x 10(-3) and 0.28 x 10(-3), respectively. These results clearly indicate that the photorefractivity of GeO2-SiO2 glasses is due to a Ge2+ defect in origin. The channel waveguide and the planar Bragg gratings were directly written in the photoactive Ge(2+)-enriched GeOs-SiO2 thin films by pulsed ultraviolet laser irradiation with a Cr-metal-loaded-type waveguide structure.
用强紫外激光脉冲辐照通过等离子体增强化学气相沉积法制备的30GeO2 - 70SiO2波导级薄膜时，在其中含有大量光活性Ge2 +缺陷的薄膜中诱导出了大的折射率变化。通过KrF和XeF准分子激光辐照，沉积态薄膜中的最大折射率变化估计分别为1.2×10(-3)和0.28×10(-3)。这些结果清楚地表明，GeO2 - SiO2玻璃的光折变特性起源于Ge2 +缺陷。通过具有Cr金属负载型波导结构的脉冲紫外激光辐照，在富含光活性Ge(2 +)的GeOs - SiO2薄膜中直接写入了通道波导和平面布拉格光栅。
