Meyer Chr, Klijn J, Morgenstern M, Wiesendanger R
Institute of Applied Physics, Hamburg University, Jungiusstrasse 11, D-20355 Hamburg, Germany.
Phys Rev Lett. 2003 Aug 15;91(7):076803. doi: 10.1103/PhysRevLett.91.076803. Epub 2003 Aug 13.
One-dimensional electron systems (1DESs) containing two and one occupied subbands are found below the different types of [11;2] steps of the InAs(110) surface. Using low-temperature scanning tunneling spectroscopy, we determined the subband energies, the disorder potential, and the local density of states of these 1DESs. The rather complete knowledge of the 1DES allowed us to compare the measured LDOS with a single-particle calculation. Surprisingly, we did not find significant deviations from the calculation albeit the electron-electron interaction in the 1DESs is stronger than the electron-disorder interaction.
在InAs(110)表面不同类型的[11;2]台阶下方发现了包含两个和一个占据子带的一维电子系统(1DESs)。利用低温扫描隧道光谱，我们确定了这些1DESs的子带能量、无序势和局域态密度。对1DESs相当完整的了解使我们能够将测量的局域态密度与单粒子计算结果进行比较。令人惊讶的是，尽管1DESs中的电子-电子相互作用强于电子-无序相互作用，但我们并未发现与计算结果有显著偏差。
