Suzuki K, Kanisawa K, Janer C, Perraud S, Takashina K, Fujisawa T, Hirayama Y
NTT Basic Research Laboratories, NTT Corporation, Atsugi-shi, Kanagawa 243-0198, Japan.
Phys Rev Lett. 2007 Mar 30;98(13):136802. doi: 10.1103/PhysRevLett.98.136802. Epub 2007 Mar 28.
We measure the spatial distribution of the local density of states (LDOS) at cleaved surfaces of InAs/GaSb isolated quantum wells and double quantum wells (DQWs) by low-temperature scanning tunneling spectroscopy. Distinct standing wave patterns of LDOS corresponding to subbands are observed. These LDOS patterns and subband energies agree remarkably well with simple calculations with tip-induced band bending. Furthermore, for the DQWs, coupling of electronic states between the quantum wells is also clearly observed.
我们通过低温扫描隧道光谱法测量了InAs/GaSb孤立量子阱和双量子阱（DQW）解理表面处的局域态密度（LDOS）的空间分布。观察到了与子带相对应的明显的LDOS驻波模式。这些LDOS模式和子带能量与尖端诱导能带弯曲的简单计算结果非常吻合。此外，对于双量子阱，还清晰地观察到了量子阱之间电子态的耦合。
