Xiao Zhi-song, Xu Fei, Zhang Tong-he, Cheng Guo-an, Gu Lan-lan
Key Laboratory in University for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing Radiation Center, Beijing 100875, China.
Guang Pu Xue Yu Guang Pu Fen Xi. 2002 Aug;22(4):538-41.
Si and Er ions were implanted into Si-rich thermal oxidation SiO2/Si thin film using metal vapor vacuum arc (MEVVA) ion source implanter, which could produce ion beams with high-fluence and strong-flux. Rutheroford backscattering spectra show that Er concentration in as-implanted sample is attained to 10 at. % corresponding to the level of 10(21) atoms.cm-3. Needle nanocrystal Si in the surface of annealed samples have been formed during ion implantation followed by rapid thermal annealing. Photoluminescence around 1.54 microns from Er-doped Si-rich thermal oxidized SiO2/Si thin film were observed at 77 K and room-temperature (RT). Light emission around the wavelength of 1.54 microns were closely related to many conditions including substrate, ion implantation and annealing etc.
使用金属蒸汽真空弧（MEVVA）离子源注入机将硅离子和铒离子注入富硅热氧化SiO₂/Si薄膜中，该注入机能产生高通量和强束流的离子束。卢瑟福背散射谱表明，注入态样品中的铒浓度达到10原子百分比，对应于10²¹原子/立方厘米的水平。在离子注入后进行快速热退火的过程中，退火样品表面形成了针状纳米晶体硅。在77K和室温（RT）下观察到掺铒富硅热氧化SiO₂/Si薄膜在1.54微米附近的光致发光。波长在1.54微米附近的发光与包括衬底、离子注入和退火等许多条件密切相关。
