Liu F, Ren B, Tian Z
Department of Chemistry, State Key Laboratory for Physical Chemistry of Solid Surfaces, Institute of Physical Chemistry, Xiamen University, 361005 Xiamen.
Guang Pu Xue Yu Guang Pu Fen Xi. 2000 Dec;20(6):833-5.
In situ surface Raman spectroscopy has been extended to study silicon electrode surfaces by optimizing the Raman system and the surface roughening method. The time-dependent etching processes were monitored in a dilute HF aqueous solution and the initial oxidation processes of the hydrogen-terminated surface in different pHs were studied at the open circuit potential. The results indicate that the silicon surface could be overwhelmingly terminated with hydrogen rather than fluorine in the HF-based solution. The smoothening effect of OH- on the silicon surface is through the attack of the = SiH2 site. It demonstrates that Raman spectroscopy is a powerful in situ technique for investigating the etching process of silicon surface.
通过优化拉曼系统和表面粗糙化方法，原位表面拉曼光谱已被扩展用于研究硅电极表面。在稀氢氟酸水溶液中监测了随时间变化的蚀刻过程，并在开路电位下研究了不同pH值下氢终止表面的初始氧化过程。结果表明，在基于氢氟酸的溶液中，硅表面主要被氢而非氟终止。OH-对硅表面的平滑作用是通过攻击=SiH2位点实现的。这表明拉曼光谱是研究硅表面蚀刻过程的一种强大的原位技术。
