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耐药性部分性癫痫患者中GABA(A)受体密度与迷走神经刺激之间的相关性

Correlation between GABA(A) receptor density and vagus nerve stimulation in individuals with drug-resistant partial epilepsy.

作者信息

Marrosu Francesco, Serra Alessandra, Maleci Alberto, Puligheddu Monica, Biggio Giovanni, Piga Mario

机构信息

Dipartimento di Scienze Neurologiche e Cardiovascolari, Policlinico Universitario, Università di Cagliari, SS 554 Bivio Sestu, 09042 Monserrato, Italy.

出版信息

Epilepsy Res. 2003 Jun-Jul;55(1-2):59-70. doi: 10.1016/s0920-1211(03)00107-4.

Abstract

Vagus nerve stimulation (VNS) is an important option for the treatment of drug-resistant epilepsy. Through delivery of a battery-supplied intermittent current, VNS protects against seizure development in a manner that correlates experimentally with electrophysiological modifications. However, the mechanism by which VNS inhibits seizures in humans remains unclear. The impairment of gamma-aminobutyric acid (GABA)-mediated neuronal inhibition associated with epilepsy has suggested that GABA(A) receptors might contribute to the therapeutic efficacy of VNS. We have now applied single photon emission computed tomography (SPECT) with the benzodiazepine receptor inverse agonist [123I]iomazenil to examine cortical GABA(A) receptor density (GRD) before and 1 year after implantation of a VNS device in 10 subjects with drug-resistant partial epilepsy. VNS therapeutic responses resulted significantly correlated with the normalization of GRD. Moreover, a comparable control group, scheduled for a possible VNS implant, failed to show significant GRD variations after 1 year of a stable anti-epileptic treatment. These results suggest that VNS may modulate the cortical excitability of brain areas associated with epileptogenesis and that GABA(A) receptor plasticity contributes to this effect.

摘要

迷走神经刺激(VNS)是治疗耐药性癫痫的重要选择。通过输送由电池供电的间歇性电流,VNS以一种与电生理改变在实验上相关的方式预防癫痫发作的发展。然而,VNS在人类中抑制癫痫发作的机制仍不清楚。与癫痫相关的γ-氨基丁酸(GABA)介导的神经元抑制受损表明,GABA(A)受体可能有助于VNS的治疗效果。我们现在应用单光子发射计算机断层扫描(SPECT)结合苯二氮䓬受体反向激动剂[123I]碘美西尼,来检查10例耐药性部分性癫痫患者在植入VNS装置前及植入后1年时的皮质GABA(A)受体密度(GRD)。VNS治疗反应与GRD的正常化显著相关。此外,一个计划可能植入VNS的可比对照组在稳定的抗癫痫治疗1年后未显示出显著的GRD变化。这些结果表明,VNS可能调节与癫痫发生相关脑区的皮质兴奋性,并且GABA(A)受体可塑性促成了这种效应。

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