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无序一维绝缘体中的相干“金属性”电阻与介质局域化

Coherent "metallic" resistance and medium localization in a disordered one-dimensional insulator.

作者信息

Mosko Martin, Vagner Pavel, Bajdich Michal, Schäpers Thomas

机构信息

Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava, Slovakia.

出版信息

Phys Rev Lett. 2003 Sep 26;91(13):136803. doi: 10.1103/PhysRevLett.91.136803.

Abstract

It is believed that a disordered one-dimensional (1D) wire with coherent electronic conduction is an insulator with the mean resistance approximately equal e(2L/xi) and resistance dispersion Delta(rho) approximately equal e(L/xi), where L is the wire length and xi is the electron localization length. Here we show that this 1D insulator undergoes at full coherence the crossover to a 1D "metal," caused by thermal smearing and resonant tunneling. As a result, Delta(rho) is smaller than unity and tends to be L/xi independent, while grows with L/xi first nearly linearly and then polynomially, manifesting the so-called medium localization.

摘要

据信,具有相干电子传导的无序一维(1D)线是一种绝缘体,其平均电阻<ρ>近似等于e(2L/ξ) ,电阻色散Δ(ρ) 近似等于e(L/ξ) ,其中L是线的长度,ξ是电子局域长度。在此我们表明,这种1D绝缘体在完全相干时会由于热展宽和共振隧穿而转变为1D“金属”。结果,Δ(ρ) 小于1且趋于与L/ξ无关,而<ρ> 随L/ξ先近似线性增长然后呈多项式增长,表现出所谓的中等局域化。

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