Khrapai V S, Shashkin A A, Dolgopolov V T
Institute of Solid State Physics, Chernogolovka, Moscow District 142432, Russia.
Phys Rev Lett. 2003 Sep 19;91(12):126404. doi: 10.1103/PhysRevLett.91.126404.
Using magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the spin and the cyclotron gaps. The data yield an effective g factor that is close to its value in bulk silicon and does not depend on the filling factor. The cyclotron splitting corresponds to the effective mass that is strongly enhanced at low electron densities.
利用倾斜磁场中的磁电容数据，当填充因子穿过自旋能隙和回旋能隙时，我们直接确定了硅中强关联二维电子系统中的化学势跃变。数据得出的有效g因子接近其在体硅中的值，且不依赖于填充因子。回旋分裂对应于在低电子密度下显著增强的有效质量。
