Hernandez L M, Bhattacharya A, Parendo Kevin A, Goldman A M
School of Physics and Astronomy, University of Minnesota, 116 Church Street SE, Minneapolis, Minnesota 55455, USA.
Phys Rev Lett. 2003 Sep 19;91(12):126801. doi: 10.1103/PhysRevLett.91.126801. Epub 2003 Sep 16.
Slow, nonexponential relaxation of electrical transport accompanied by memory effects has been induced in quench-condensed ultrathin amorphous Bi films by the application of a parallel magnetic field. This behavior, which is very similar to space-charge limited current flow, is found in extremely thin films well on the insulating side of the thickness-tuned superconductor-insulator transition. It may be the signature of a collective state that forms when the carriers are spin polarized at low temperatures and in high magnetic fields.
通过施加平行磁场，在骤冷凝聚的超薄非晶铋薄膜中诱导出了伴随着记忆效应的缓慢、非指数型电输运弛豫。这种行为与空间电荷限制电流非常相似，在厚度调谐的超导体 - 绝缘体转变绝缘侧的极薄膜中被发现。它可能是当载流子在低温和强磁场下自旋极化时形成的一种集体态的特征。
