Li J Jack, Wang Y Andrew, Guo Wenzhuo, Keay Joel C, Mishima Tetsuya D, Johnson Matthew B, Peng Xiaogang
Department of Chemistry & Biochemistry, University of Arkansas, Fayetteville, Arkansas 72701, USA.
J Am Chem Soc. 2003 Oct 15;125(41):12567-75. doi: 10.1021/ja0363563.
Successive ion layer adsorption and reaction (SILAR) originally developed for the deposition of thin films on solid substrates from solution baths is introduced as a technique for the growth of high-quality core/shell nanocrystals of compound semiconductors. The growth of the shell was designed to grow one monolayer at a time by alternating injections of air-stable and inexpensive cationic and anionic precursors into the reaction mixture with core nanocrystals. The principles of SILAR were demonstrated by the CdSe/CdS core/shell model system using its shell-thickness-dependent optical spectra as the probes with CdO and elemental S as the precursors. For this reaction system, a relatively high temperature, about 220-240 degrees C, was found to be essential for SILAR to fully occur. The synthesis can be readily performed on a multigram scale. The size distribution of the core/shell nanocrystals was maintained even after five monolayers of CdS shell (equivalent to about 10 times volume increase for a 3.5 nm CdSe nanocrystal) were grown onto the core nanocrystals. The epitaxial growth of the core/shell structures was verified by optical spectroscopy, TEM, XRD, and XPS. The photoluminescence quantum yield (PL QY) of the as-prepared CdSe/CdS core/shell nanocrystals ranged from 20% to 40%, and the PL full-width at half-maximum (fwhm) was maintained between 23 and 26 nm, even for those nanocrystals for which the UV-vis and PL peaks red-shifted by about 50 nm from that of the core nanocrystals. Several types of brightening phenomena were observed, some of which can further boost the PL QY of the core/shell nanocrystals. The CdSe/CdS core/shell nanocrystals were found to be superior in comparison to the highly luminescent CdSe plain core nanocrystals. The SILAR technique reported here can also be used for the growth of complex colloidal semiconductor nanostructures, such as quantum shells and colloidal quantum wells.
连续离子层吸附与反应(SILAR)最初是为从溶液浴中在固体基板上沉积薄膜而开发的,现作为一种用于生长高质量化合物半导体核/壳纳米晶体的技术被引入。壳层的生长设计为通过将空气稳定且廉价的阳离子和阴离子前驱体交替注入含有核纳米晶体的反应混合物中,每次生长一个单分子层。使用以CdO和元素硫为前驱体、其壳层厚度依赖的光谱作为探针的CdSe/CdS核/壳模型系统,证明了SILAR的原理。对于该反应系统,发现相对较高的温度(约220 - 240摄氏度)对于SILAR充分发生至关重要。该合成可以很容易地在多克规模上进行。即使在核纳米晶体上生长了五层CdS壳层(对于3.5纳米的CdSe纳米晶体,相当于体积增加约10倍)之后,核/壳纳米晶体的尺寸分布仍得以保持。通过光谱学、透射电子显微镜(TEM)、X射线衍射(XRD)和X射线光电子能谱(XPS)验证了核/壳结构的外延生长。所制备的CdSe/CdS核/壳纳米晶体的光致发光量子产率(PL QY)在20%至40%之间,并且即使对于那些紫外 - 可见(UV - vis)和PL峰相对于核纳米晶体红移约50纳米的纳米晶体,其PL半高宽(fwhm)也保持在23至26纳米之间。观察到了几种类型的增亮现象,其中一些可以进一步提高核/壳纳米晶体的PL QY。发现CdSe/CdS核/壳纳米晶体比高发光的CdSe纯核纳米晶体更具优势。这里报道的SILAR技术也可用于生长复杂的胶体半导体纳米结构,如量子壳层和胶体量子阱。