Haxha Shyqyri, Rahman B M Azizur, Obayya Salah S A, Grattan Kenneth T V
School of Engineering and Mathematical Sciences, City University London, Northampton Square, London EC1V 0HB, UK.
Appl Opt. 2003 Dec 20;42(36):7179-87. doi: 10.1364/ao.42.007179.
New designs for the velocity matching of a deep-etched semiconductor electro-optic modulator are presented. A tantalum pentoxide (Ta2O5) coating is considered here for achieving velocity matching between the microwave and the optical signals. The effects of the velocity mismatch, the conductor loss, the dielectric loss, and the impedance mismatch are studied in relation to the optical bandwidth of a high-speed semiconductor modulator. It is shown that both the dielectric loss and the impedance matching play key roles for velocity-matched high-speed modulators with low conductor loss. The effects of Ta2O5 thickness on the overall bandwidth and on the half-wave voltage-length product VpiL are also reported.
本文提出了一种用于深蚀刻半导体电光调制器速度匹配的新设计。本文考虑采用五氧化二钽（Ta2O5）涂层来实现微波信号与光信号之间的速度匹配。针对高速半导体调制器的光带宽，研究了速度失配、导体损耗、介电损耗和阻抗失配的影响。结果表明，对于具有低导体损耗的速度匹配高速调制器，介电损耗和阻抗匹配都起着关键作用。还报道了Ta2O5厚度对整体带宽和半波电压-长度乘积VpiL的影响。
