Haxha Shyqyri, Rahman B M Azizur, Grattan Kenneth T V
School of Engineering and Mathematical Sciences, City University, Northampton Square, London EC1V 0HB, United Kingdom.
Appl Opt. 2003 May 20;42(15):2674-82. doi: 10.1364/ao.42.002674.
The effects of velocity matching, impedance matching, conductor loss, and dielectric loss on the optical bandwidth of an ultra-high-speed lithium niobate modulator are reported. It is shown that both dielectric loss and impedance matching play a key role for velocity-matched high-speed modulators with low conductor loss. The effects of etch depth, buffer thickness, electrode width, and thegap between the electrodes on device performance are also illustrated.
