Uniform micro-sized alpha- and beta-Si3N4 thin ribbons grown by a high-temperature thermal-decomposition/nitridation route.

Uniform micro-sized alpha- and beta-Si(3)N(4) thin ribbons have been achieved by a high-temperature thermal-decomposition/nitridation route. As-grown ribbons were characterized by using powder X-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy, and cathodoluminescence. These alpha- and beta-Si(3)N(4) ribbons are structurally uniform micro-sized single crystals, and have a width of approximately 2-3 microns, a thickness of approximately 20-60 nm, and a length, that ranges from several hundreds of microns to the order of millimeters. A room-temperature cathodoluminescence spectrum recorded from these ribbons shows one intensive blue emission peak at approximately 433 nm. The growth for the new ribbon form of this material is believed to be dominated by a vapor-solid process.