Hu Junqing, Bando Yoshio, Liu Zongwen, Xu Fangfang, Sekiguchi Takashi, Zhan Jinhua
Advanced Materials Laboratory and Nanomaterials Laboratory, National Institute, for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
Chemistry. 2004 Jan 23;10(2):554-8. doi: 10.1002/chem.200305390.
Uniform micro-sized alpha- and beta-Si(3)N(4) thin ribbons have been achieved by a high-temperature thermal-decomposition/nitridation route. As-grown ribbons were characterized by using powder X-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy, and cathodoluminescence. These alpha- and beta-Si(3)N(4) ribbons are structurally uniform micro-sized single crystals, and have a width of approximately 2-3 microns, a thickness of approximately 20-60 nm, and a length, that ranges from several hundreds of microns to the order of millimeters. A room-temperature cathodoluminescence spectrum recorded from these ribbons shows one intensive blue emission peak at approximately 433 nm. The growth for the new ribbon form of this material is believed to be dominated by a vapor-solid process.
通过高温热分解/氮化路线制备出了均匀的微米尺寸的α-和β-Si₃N₄细带。对生长态的细带采用粉末X射线衍射、扫描电子显微镜、透射电子显微镜、能量色散X射线光谱、电子能量损失光谱和阴极发光进行了表征。这些α-和β-Si₃N₄细带是结构均匀的微米尺寸单晶，宽度约为2-3微米，厚度约为20-60纳米，长度从几百微米到毫米量级。从这些细带记录的室温阴极发光光谱在约433纳米处显示出一个强烈的蓝色发射峰。这种材料新的细带形式的生长被认为主要由气-固过程主导。
