Tang Qingxin, Li Hongxiang, Liu Yaling, Hu Wenping
Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, People's Republic of China.
J Am Chem Soc. 2006 Nov 15;128(45):14634-9. doi: 10.1021/ja064476f.
High-performance air-stable n-type field-effect transistors based on single-crystalline submicro- and nanometer ribbons of copper hexadecafluorophthalocyanine (F(16)CuPc) were studied by using a novel device configuration. These submicro- and nanometer ribbons were synthesized by a physical vapor transport technique and characterized by the powder X-ray diffraction pattern and selected area electron diffraction pattern of transmission electron microscopy. They were found to crystallize in a structure different from that of copper phthalocyanine. These single-crystalline submicro- and nanometer ribbons could be in situ grown along the surface of Si/SiO(2) substrates during synthesis. The intimate contact between the crystal and the insulator surface generated by the "in situ growing process" was free from the general disadvantages of the handpicking process for the fabrication of organic single-crystal devices. High performance was observed in devices with an asymmetrical drain/source (Au/Ag) electrode configuration because in such devices a stepwise energy level between the electrodes and the lowest unoccupied molecular orbital of F(16)CuPc was built, which was beneficial to electron injection and transport. The field-effect mobility of such devices was calculated to be approximately 0.2 cm(2) V(-)(1) s(-)(1) with the on/off ratio at approximately 6 x 10(4). The performances of the transistors were air stable and highly reproducible.
采用一种新颖的器件结构，对基于十六氟铜酞菁（F(16)CuPc）单晶亚微米和纳米带的高性能空气稳定型n型场效应晶体管进行了研究。这些亚微米和纳米带通过物理气相传输技术合成，并通过粉末X射线衍射图谱和透射电子显微镜的选区电子衍射图谱进行表征。发现它们结晶形成的结构与铜酞菁的结构不同。这些单晶亚微米和纳米带在合成过程中可以沿着Si/SiO(2)衬底表面原位生长。“原位生长过程”在晶体与绝缘体表面之间产生的紧密接触避免了制造有机单晶器件时手工挑选过程的一般缺点。在具有不对称漏极/源极（Au/Ag）电极配置的器件中观察到了高性能，因为在这种器件中，电极与F(16)CuPc的最低未占据分子轨道之间构建了逐步的能级，这有利于电子注入和传输。这种器件的场效应迁移率经计算约为0.2 cm(2) V(-)(1) s(-)(1)，开/关比约为6 x 10(4)。晶体管的性能在空气中稳定且具有高度可重复性。
