Wagner M S
Surface and Microanalysis Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20889-8371, USA.
Anal Chem. 2004 Mar 1;76(5):1264-72. doi: 10.1021/ac035330r.
Ion-induced damage of polymers is a critical factor in the depth profiling of polymer surfaces using polyatomic primary ions. In this study, time-of-flight secondary ion mass spectrometry was used to measure the damage of spin-cast poly(methyl methacrylate) (PMMA) films under 5-keV Cs(+) and 2.5-8.75-keV SF(5)(+) bombardment. Under 5-keV Cs(+) bombardment, the characteristic PMMA secondary ion intensities decreased rapidly for primary ion doses above 5 x 10(13) ions/cm(2). The damage profiles of PMMA under SF(5)(+) bombardment contained three distinct regions as a function of SF(5)(+) ion dose: a surface transient, an extended quasi-stabilization of the characteristic PMMA secondary ion intensities, and the decay of these intensities as the silicon substrate was reached. The PMMA film sputtered in a controlled manner for SF(5)(+) ion doses up to 4 x 10(14) ions/cm(2), with the maximum ion dose limited by the thickness of the PMMA film. Furthermore, the chemistry at the bottom of the sputter crater was significantly less modified by SF(5)(+) bombardment when compared with Cs(+) bombardment. The sputter rate was linearly correlated with the SF(5)(+) impact energy while the damage to the PMMA film varied minimally with the SF(5)(+) impact energy. These results were compared with Monte Carlo (SRIM) calculations of the penetration depth and vacancy production for SF(5)(+) at different impact energies. Since the SF(5)(+) impact energy only affected the sputter rate, selection of the appropriate SF(5)(+) impact energy for polymer depth profiling depends solely on the desired sputter rate.
离子对聚合物的损伤是使用多原子一次离子对聚合物表面进行深度剖析的关键因素。在本研究中,采用飞行时间二次离子质谱法来测量旋涂聚甲基丙烯酸甲酯(PMMA)薄膜在5 keV Cs(+)和2.5 - 8.75 keV SF(5)(+)轰击下的损伤情况。在5 keV Cs(+)轰击下,当一次离子剂量高于5×10(13)离子/cm(2)时,PMMA特征二次离子强度迅速下降。在SF(5)(+)轰击下,PMMA的损伤分布随SF(5)(+)离子剂量呈现出三个不同区域:一个表面瞬态区、特征PMMA二次离子强度的扩展准稳定区以及当到达硅衬底时这些强度的衰减区。对于高达4×10(14)离子/cm(2)的SF(5)(+)离子剂量,PMMA薄膜以可控方式溅射,最大离子剂量受PMMA薄膜厚度限制。此外,与Cs(+)轰击相比,SF(5)(+)轰击对溅射坑底部化学性质的改变明显较小。溅射速率与SF(5)(+)撞击能量呈线性相关,而PMMA薄膜的损伤随SF(5)(+)撞击能量变化极小。将这些结果与不同撞击能量下SF(5)(+)的穿透深度和空位产生的蒙特卡罗(SRIM)计算结果进行了比较。由于SF(5)(+)撞击能量仅影响溅射速率,因此为聚合物深度剖析选择合适的SF(5)(+)撞击能量仅取决于所需的溅射速率。