McIntosh J S, Neild A, Hutchins D A, Billson D R, Noble R A, Davies R R
School of Engineering, University of Warwick, Coventry CV4 7AL, UK.
Ultrasonics. 2004 Apr;42(1-9):447-52. doi: 10.1016/j.ultras.2003.12.033.
This paper presents results from a theoretical model of the ultrasonic fields radiated by a 3x3 assembly of capacitive micromachined ultrasonic transducer (cMUT) sources on the same silicon substrate. These predictions have, for the first time, been compared directly to the fields measured experimentally using a scanned miniature detector. This work indicates that there is minimal cross-coupling between source elements, and demonstrates that it is possible to predict successfully the field characteristics of various geometries of such cMUT elements, with a view to the development of future imaging systems.
本文展示了由同一硅基片上的3×3电容式微机械超声换能器（cMUT）源组件辐射的超声场理论模型的结果。这些预测首次直接与使用扫描微型探测器进行实验测量得到的场进行了比较。这项工作表明源元件之间的交叉耦合极小，并证明了成功预测此类cMUT元件各种几何形状的场特性对于未来成像系统的开发是可行的。
