Kupris G, Rössler H, Ecke G, Hofmann S
TU Ilmenau, Institut für Festkörperelektronik, Postfach 327, D-98684, Ilmenau, Germany.
Anal Bioanal Chem. 1995 Oct;353(3-4):307-10. doi: 10.1007/s0021653530307.
The interpretation of sputter depth profiles can be simplified by use of computer simulations. Distortions caused by mixing effects and distortions caused by the information depth of the analytical method have to be distinguished. Atomic mixing and the information depth distort the depth profile simultaneously. Therefore, it is necessary to take into consideration a superposition of both distortion effects. The sputtering of a GaAs/A1As multilayer has been calculated on a personal computer with the binary collision approximation code T-DYN by Biersack and with an own layer model. A new computer code LAMBDA has been used for the investigation of the influence of the AES information depth in addition to atomic mixing and preferential sputtering. A comparison of the calculated and the measured depth profile explains the observed effects. Therefore conclusions can be drawn about the original elemental distribution in the sample from the measured depth profile.
通过计算机模拟可以简化对溅射深度剖面的解释。必须区分由混合效应引起的畸变和由分析方法的信息深度引起的畸变。原子混合和信息深度会同时使深度剖面发生畸变。因此,有必要考虑这两种畸变效应的叠加。利用Biersack的二元碰撞近似代码T-DYN并结合自己的层模型,在个人计算机上计算了GaAs/A1As多层膜的溅射过程。除了原子混合和择优溅射外,还使用了一种新的计算机代码LAMBDA来研究俄歇电子能谱(AES)信息深度的影响。将计算得到的深度剖面与测量得到的深度剖面进行比较,解释了观察到的效应。因此,可以从测量得到的深度剖面得出关于样品中原始元素分布的结论。