Epifani Mauro, Siciliano Pietro, Gurlo Alexander, Barsan Nicolae, Weimar Udo
Istituto per la Microelettronica e i Microsistemi, IMM-CNR, Sezione di Lecce, Via Arnesano, 73100 Lecce, Italy.
J Am Chem Soc. 2004 Apr 7;126(13):4078-9. doi: 10.1021/ja0318075.
This communication reports the formation of the high-pressure modification of indium (III) oxide (so-called corundum-type or hexagonal In2O3) under ambient pressure. Corundum-type In2O3 was obtained by precipitation from the solution of indium nitrate in methanol by adding concentrated ammonia solution and subsequent calcination of the obtained precipitate at 250-500 degrees C. The role of the impurities and the additives in the stabilization of corundum-type In2O3 is discussed.
本通讯报道了在常压下形成的氧化铟（III）的高压变体（所谓的刚玉型或六方相In₂O₃）。通过向硝酸铟的甲醇溶液中加入浓氨水进行沉淀，并将所得沉淀在250 - 500℃下煅烧，得到了刚玉型In₂O₃。讨论了杂质和添加剂在稳定刚玉型In₂O₃中的作用。
