Mani R G, Smet J H, von Klitzing K, Narayanamurti V, Johnson W B, Umansky V
Gordon McKay Laboratory of Applied Science, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138, USA.
Phys Rev Lett. 2004 Apr 9;92(14):146801. doi: 10.1103/PhysRevLett.92.146801. Epub 2004 Apr 8.
We examine the phase and the period of the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ magnetic field calibration by electron spin resonance of diphenyl-picryl-hydrazal. The results confirm a f-independent 1/4-cycle phase shift with respect to the hf=j variant Planck's over 2pi omega(c) condition for j>/=1, and they also suggest a small ( approximately 2%) reduction in the effective mass ratio, m(*)/m, with respect to the standard value for GaAs/AlGaAs devices.
我们利用二苯基苦味酰基肼的电子自旋共振进行原位磁场校准，研究了GaAs/AlGaAs器件中辐射诱导的振荡磁阻的相位和周期。结果证实，对于j≥1，相对于hf = j变体普朗克常数除以2πω(c)条件，存在与f无关的1/4周期相移，并且还表明有效质量比m(*)/m相对于GaAs/AlGaAs器件的标准值有小幅（约2%）降低。
