Poudel Rameshwor, Wijewardena U Kushan, Nanayakkara Tharanga N, Kriisa Annika, Reichl Christian, Wegscheider Werner, Mani Ramesh G
Department of Physics and Astronomy, Georgia State University, Atlanta, GA, 30303, USA.
Laboratorium für Festkörperphysik, ETH Zürich, 8093, Zurich, Switzerland.
Sci Rep. 2025 Jul 25;15(1):27171. doi: 10.1038/s41598-025-11661-z.
We study the current scaling of the oscillatory magnetoresistance peak height in microwave induced magnetoresistance oscillations, over the temperature range [Formula: see text], by examining the change in response observed under a supplementary [Formula: see text] current bias, when the [Formula: see text] also produces an overall giant negative magnetoresistance in the high mobility GaAs/AlGaAs system. A "universality" is observed in the decay of the magnetoresistance peak height over the examined temperatures, sizes, and applied [Formula: see text]. The results suggest that the photoexcited resistance maxima are sensitive not to the DC current, but rather to the current density [Formula: see text].
我们通过研究在附加的[公式:见原文]电流偏置下观察到的响应变化,来研究在[公式:见原文]温度范围内,微波诱导磁电阻振荡中振荡磁电阻峰值高度的当前标度,此时[公式:见原文]在高迁移率GaAs/AlGaAs系统中也会产生整体巨大的负磁电阻。在所研究的温度、尺寸和施加的[公式:见原文]范围内,磁电阻峰值高度的衰减呈现出一种“普适性”。结果表明,光激发电阻最大值对直流电流不敏感,而是对电流密度[公式:见原文]敏感。