Veal T D, Mahboob I, McConville C F
Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom.
Phys Rev Lett. 2004 Apr 2;92(13):136801. doi: 10.1103/PhysRevLett.92.136801. Epub 2004 Apr 1.
A thin layer of InNSb has been fabricated by low energy nitrogen implantation in the near-surface region of InSb. X-ray photoelectron spectroscopy indicates that nitrogen occupies approximately 6% of the anion lattice sites. High-resolution electron-energy-loss spectroscopy of the conduction band electron plasma reveals the absence of a depletion layer for this alloy, thus indicating that the Fermi level is located below the valence band maximum (VBM). The plasma frequency for this alloy combined with the semiconductor statistics indicates that the Fermi level is located above the conduction band minimum (CBM). Consequently, the CBM is located below the VBM, indicating a negative band gap material has been formed. These measurements are consistent with k.p calculations for InN0.06Sb0.94 that predict a semimetallic band structure.
通过在InSb近表面区域进行低能氮离子注入制备了一层薄的InNSb。X射线光电子能谱表明氮占据了约6%的阴离子晶格位点。导带电子等离子体的高分辨率电子能量损失谱显示该合金不存在耗尽层，因此表明费米能级位于价带最大值（VBM）之下。该合金的等离子体频率与半导体统计数据表明费米能级位于导带最小值（CBM）之上。因此，CBM位于VBM之下，表明形成了一种负带隙材料。这些测量结果与InN0.06Sb0.94的k.p计算结果一致，该计算预测了一种半金属能带结构。
