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纳米晶纯氧化锡的室温氢气敏感性

Room temperature hydrogen gas sensitivity of nanocrystalline pure tin oxide.

作者信息

Shukla S, Seal S

机构信息

Advanced Materials Processing and Analysis Center (AMPAC), Mechanical Materials Aerospace Engineering Department (MMAE), University of Central Florida, Orlando, Florida 32816, USA.

出版信息

J Nanosci Nanotechnol. 2004 Jan-Feb;4(1-2):141-5. doi: 10.1166/jnn.2004.022.

Abstract

Nanocrystalline (6-8 nm) tin oxide (SnO2) thin film (100-150 nm) sensor is synthesized via sol-gel dip-coating process. The thin film is characterized using focused ion-beam microscopy (FIB) and high-resolution transmission electron microscopy (HRTEM) techniques to determine the film thickness and the nanocrystallite size. The utilization of nanocrystalline pure-SnO2 thin film to sense a typical reducing gas such as hydrogen, at room temperature, is demonstrated in this investigation. The grain growth behavior of nanocrystalline pure-SnO2 is analyzed, which shows very low activation energy (9 kJ/mol) for the grain growth within the nanocrystallite size range of 3-20 nm. This low activation energy value is correlated, via excess oxygen-ion vacancy concentration, with the room temperature hydrogen gas sensitivity of the nanocrystalline pure-SnO2 thin film sensor.

摘要

通过溶胶-凝胶浸涂工艺合成了纳米晶(6-8纳米)氧化锡(SnO2)薄膜(100-150纳米)传感器。使用聚焦离子束显微镜(FIB)和高分辨率透射电子显微镜(HRTEM)技术对该薄膜进行表征,以确定薄膜厚度和纳米微晶尺寸。本研究展示了利用纳米晶纯SnO2薄膜在室温下检测典型还原性气体(如氢气)的情况。分析了纳米晶纯SnO2的晶粒生长行为,结果表明在3-20纳米的纳米微晶尺寸范围内,晶粒生长的活化能非常低(9千焦/摩尔)。通过过量的氧离子空位浓度,将这个低活化能值与纳米晶纯SnO2薄膜传感器的室温氢气灵敏度相关联。

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