Yelshansky Maria V, Sobolevsky Alexander I, Jatzke Claudia, Wollmuth Lonnie P
Department of Neurobiology and Behavior, State University of New York at Stony Brook, Stony Brook, New York 11794-5230, USA.
J Neurosci. 2004 May 19;24(20):4728-36. doi: 10.1523/JNEUROSCI.0757-04.2004.
Desensitization of ionotropic glutamate receptors (GluRs), specifically the AMPA receptor subtype, shapes the postsynaptic response at certain synapses in the brain. All known mechanisms that alter desensitization, either pharmacological or mutational, are associated with the ligand-binding domain. Here we report that substitution of a conserved positively charged arginine (R) with a negatively charged glutamate in the linker between the pore-forming M3 segment and the S2 lobe, a region outside the ligand-binding domain, blocks desensitization in homomeric AMPA receptors composed of GluR-B(i) subunits. A charge-reversing substitution of a glutamate adjacent to this conserved R enhanced desensitization, consistent with these effects attributable to electrostatics. Homologous substitutions of the conserved R in GluR-B(o), GluR-A(i) and the kainate receptor GluR-6 subunits produced comparable but less visible effects on desensitization. Subunit specificity was also apparent for accessibility of substituted cysteines in the M3-S2 linker, suggesting that this part of the channel is not structurally identical in different GluRs. Additionally, reactivity with a sulfhydryl-specific reagent was state dependent, suggesting that the conformations of the nonconducting closed and desensitized states are different at the level of the M3-S2 linker. Our results therefore represent the first identification of elements outside the ligand-binding domain affecting desensitization in non-NMDA receptor channels and suggest that electrostatic interactions involving charged residues in the M3-S2 linker influence channel gating in a subunit- and subtype-specific manner.
离子型谷氨酸受体(GluRs),特别是AMPA受体亚型的脱敏作用,塑造了大脑中某些突触的突触后反应。所有已知的改变脱敏作用的机制,无论是药理学上的还是突变引起的,都与配体结合结构域相关。在此我们报告,在构成孔道的M3片段和S2叶之间的连接区域(配体结合结构域之外的一个区域),将一个保守的带正电荷的精氨酸(R)替换为带负电荷的谷氨酸,会阻断由GluR-B(i)亚基组成的同聚AMPA受体的脱敏作用。与这个保守的R相邻的谷氨酸进行电荷反转替换会增强脱敏作用,这与这些效应归因于静电作用一致。在GluR-B(o)、GluR-A(i)和海人藻酸受体GluR-6亚基中对保守的R进行同源替换,对脱敏作用产生了类似但不太明显的影响。对于M3-S2连接区域中替换的半胱氨酸的可及性,亚基特异性也很明显,这表明通道的这一部分在不同的GluRs中结构并不相同。此外,与巯基特异性试剂的反应性是状态依赖性的,这表明在M3-S2连接区域水平上,非传导性关闭状态和脱敏状态的构象是不同的。因此,我们的结果首次鉴定了配体结合结构域之外影响非NMDA受体通道脱敏作用的元件,并表明涉及M3-S2连接区域中带电荷残基的静电相互作用以亚基和亚型特异性方式影响通道门控。